Texture of surfaces cleaned by ion bombardment and annealing |
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| Affiliation: | 1. Bell Telephone Laboratories Inc., Murray Hill, New Jersey, U.S.A.;1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi''an Jiaotong University, Xi''an, 710049, China;2. State Key Laboratory of Transient Optics and Photonics, Xi''an Institute of Optics and Precision Mechanics of CAS, Xi''an, 710119, China;3. Department of Cell Biology and Molecular Genetics;4. First-Year Innovation and Research Experience Program, University of Maryland, College Park, Maryland 20742 |
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| Abstract: | GaAs (110) surfaces cleaned by ion bombardment and annealing at 350°C show a peculiar LEED pattern consisting of sharp and diffuse integer order spots. A method of analyzing the diffraction patterns is developed, revealing that the surface has many steps of constant height and random orientation with a variety of terrace widths. Annealing at 550°C yields a surface atomically smooth over at least 300 Å. The new method of surface analysis may be used also for a study of surface migration, crystal growth and related phenomena. |
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