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异质结材料及其表面金属膜的俄歇能谱研究
引用本文:严申生,李唯旦,潘慧珍. 异质结材料及其表面金属膜的俄歇能谱研究[J]. 分析测试学报, 1991, 0(2)
作者姓名:严申生  李唯旦  潘慧珍
作者单位:上海测试技术研究所(严申生),中科院上海冶金研究所(李唯旦),中科院上海冶金研究所(潘慧珍)
摘    要:
本文阐述主要使用AES研究单层或多层InP/InGaAsP异质结材料的界面,发现晶格失配会引起组分缓变。另外也分析了各种不同温度下的欧姆接触,观察到各金属之间及金属/半导体界面上的相互扩散情况。

关 键 词:AES  异质结材料  晶格失配  欧姆接触

Research on Heterojunction Material and Metallic Film by AES
Yan Shensheng,Li WeiDan,Pan Huizheng Shanghai Lnstitute of Testing Technology Shanghai Lnstitute of Metallurgy,Academia Sinice. Research on Heterojunction Material and Metallic Film by AES[J]. Journal of Instrumental Analysis, 1991, 0(2)
Authors:Yan Shensheng  Li WeiDan  Pan Huizheng Shanghai Lnstitute of Testing Technology Shanghai Lnstitute of Metallurgy  Academia Sinice
Abstract:
This paper studied mainly the mono-layer or multi-layers lnP/lnGaAsP heterojunction ma-terial interface by AES, and found that the lattiee mismatch led to composition slowchangingMoreover, Ohm contact has been analysed under different temperature, and the diffusion betw-een metals each other as well as metal-semiconductor interfaces was observed.
Keywords:Auger Electron Spectroscopy  heterojunction material  lattice mismatch  ohm coatact
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