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Threshold switching effects in AgTlSe2 and CuTlSe2 films

Authors:	M. A. Afifi H. H. A. Labib A. H. Abou El Ela K. A. Sharaf

Affiliation:	(1) Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt;(2) Physics Department, Faculty of Science, Al Azhar University (Girls branch), Cairo, Egypt

Abstract:	Switching effects in AgTlSe₂ and CuTlSe₂ chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV_th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.

Keywords:	72.20
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