Connection of silicon nanocrystals (Si-nc) with multi-walled carbon nanotubes

During the last decade silicon nanocrystals (Si-nc) have received widespread interest because of their high quantum efficiency for light emission at room temperature. However, the challenge still ahead is to study and apply these to single Si-ncoptoelectronics, i.e., solving problems linked with connection and manipulation. In this letter we report on connecting (wiring) single Si-nc with conducting multi-walled carbon nanotubes (MWNTs). We have been able to establish a strong mechanical connection by direct growth of MWNTs on Si-nc used as support of iron nanoparticles, by catalytic chemical vapor deposition (CCVD). To monitor the initial stage of the MWNTs growth process, we used a tapered element oscillating microbalance (TEOM). We compared the growth process on Si-nc coated by iron (Fe/Si-nc) to the standard process of growing MWNTs on alumina as support for iron (Fe/Al). The results showed that in the case of Fe/Si-nc catalyst, we obtained three times larger diameter of multi-walled CNTs compared to Fe/Al. This was mainly due to the Si-nc size. The diameter of the CNTs only depended on the size of the Si-nc particles that rested stuck on the tip of the MWNTs. The connected Si-nc kept their photoluminescence properties at room temperature. The present findings open new opportunities in the development of nanodevices for the optoelectronic application field. PACS 81.07.Bc; 81.07.Lk; 81.07.De