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Ultra thin V2O3 films grown on oxidized Si(1 1 1) |
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| Authors: | F Stavale H Niehus CA Achete |
| Institution: | aDivisão de Metrologia de Materiais (DIMAT), Inmetro, CEP 25250-020, Xerém, Duque, de Caxias, RJ, Brazil;bInstitut für Physik, Humboldt Universität zu Berlin, Newtonstraße 15, Berlin 12489, Germany;cPrograma de Engenharia Metalúrgica e de Materiais (PEMM), Universidade Federal do Rio de Janeiro, Cx. Postal 68505, CEP 21945-970, Rio de Janeiro, RJ, Brazil |
| Abstract: | The growth of V2O3(0 0 0 1) has been investigated by scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Direct evaporation of vanadium onto the Si(1 1 1)-7 × 7 substrate gives rise to massive surface intermixing and consequent silicide formation. In order to obtain the vanadium oxide with good quality, the 7 × 7 surface was initially partially oxidized which leads to a smooth oxygen–silicon surface layer which in turn prevents a complete vanadium–silicon alloy formation. Finally a vanadium oxide film of V2O3 stoichiometry was created. The grown film exposes single crystalline areas of stepped surfaces which appear azimuthally randomly-oriented. |
| Keywords: | Silicon (1 1 1) Surface 7 × 7 Reconstruction Vanadium oxide Thin film growth Scanning tunnelling microscopy |
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