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Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4 |
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| Authors: | S. Meenakshi V. Vijayakumar A. Eifler |
| Affiliation: | a High Pressure Physics Division, Purnima Labs, Bhabha Atomic Research Centre, Mumbai 400085, India b Klebendorfer Strasse 47a, D-04425 Taucha, Germany c Department of Physics, Colorado State University, Fort Collins, CO 80523, USA |
| Abstract: | Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites. |
| Keywords: | C. X-ray diffraction C. High Pressure A. Semiconductors A. Optical materials |
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