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助熔剂法生长的PLZST单晶的缺陷研究
引用本文:严清峰,宋锋兵,张一玲,李强.助熔剂法生长的PLZST单晶的缺陷研究[J].人工晶体学报,2001,30(2):211-215.
作者姓名:严清峰  宋锋兵  张一玲  李强
作者单位:武汉理工大学
基金项目:国家重点自然科学基金资助项目(No.59972025)
摘    要:本文介绍了助熔剂缓慢降温自发成核法生长的稀土掺杂锆钛锡酸铅镧(PLZST)晶体中出现的几种缺陷:包裹体、开裂、位错、枝晶,分析了这些缺陷的形成机理并提出了减少和消除这些缺陷的一些措施。

关 键 词:PLZST单晶  晶体生长  助熔剂法  缺陷  
文章编号:1000-985X(2001)02-0211-05
修稿时间:2000年7月11日

Research on the Defects of PLZST Single Crystal Grown by Flux Method
YAN Qing-feng,SONG Feng-bing,ZHANG Yi-ling,LI Qiang.Research on the Defects of PLZST Single Crystal Grown by Flux Method[J].Journal of Synthetic Crystals,2001,30(2):211-215.
Authors:YAN Qing-feng  SONG Feng-bing  ZHANG Yi-ling  LI Qiang
Abstract:The defects such as inclusion,splitting,dislocation and dendrite in the PbxLa1-x(Zry Tiz Sn1-y-z)O3(PLZST) single crystal grown from PbO-PbF2 flux by the slow cooling self-seeding technique were discussed in this paper.The forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed.
Keywords:The defects such as inclusion  splitting  dislocation and dendrite in the PbxLa1-x(Zry Tiz Sn1-y-z)O3(PLZST) single crystal grown from PbO-PbF2 flux by the slow cooling self-seeding technique were discussed in this paper  The forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed    
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