Thermally stimulated currents in disordered solids at fractional heating

Thermally stimulated currents (TSCs) in disordered solids, registered at fractional sample heating, are investigated theoretically. The Gobrecht–Hofmann method of determining trap distribution in energy gap is extended to the case of significant carrier retrapping. Two specific cases, when the TSCs are limited either by carrier recombination or by carrier neutralization on collecting electrode, are considered. The accuracy of proposed method is estimated from the analysis of TSC curves, calculated numerically for exponential and Gaussian trap distributions.