首页 | 本学科首页   官方微博 | 高级检索  
     


Molecular beam epitaxy and reconstructed surfaces
Authors:H. -J. Gossmann and L. C. Feldman
Affiliation:(1) AT & T Bell Laboratories, 07974 Murray Hill, NJ, USA
Abstract:
In the last years molecular beam epitaxy (MBE) has become a very important method to create new materials. Scattering and channeling of high-energy ions is a mass-dispersive, surface-sensitive crystallographic technique, particularly suited for the investigation of epitaxial systems. The combination of both techniques allows new insight into some of the fundamental processes at interfaces and surfaces. As an example we discuss the influence of substrate reconstruction on epitaxial growth. We show for the Si/Ge and Si/Si systems that the reordering of the reconstruction-induced displacements at the substrate surface, a necessary condition for epitaxial growth, is critically dependent on the type of reconstruction: Deposition of Ge or Si on Si(100)2×1 at room-temperature relieves the reconstruction, whereas Si(111)7×7 appears unaffected. This difference is discussed in terms of structural models for these surfaces. We shall also discuss the implications of these results with respect to MBE and, in particular, to Si homoepitaxial temperatures.
Keywords:68.55.+b  68.20.+t  61.80.Mk
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号