沉积参数对SiNx薄膜结构及阻透性能的影响

利用直流脉冲磁控溅射法在室温下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、台阶仪、紫外—可见分光光度计、接触角测量仪、透湿测试仪等表征技术，分析了N₂流量、Si靶溅射功率等实验参数对SiN_x薄膜成分、结构、及阻透性能、透光性能、接触角等性能的影响.研究结果表明，Si靶溅射功率固定时，在低N₂流量条件下，或N₂流量固定时，在高Si靶溅射功率条件下，制备的SiN _{关键词： x}')" href="#">SiN_x 磁控溅射 微观结构 阻透性能

Influence of deposition parameter on chemical structure and moisture resistant properties for SiNx films deposited by DC pulse magnetron sputtering

Hydrogen-free SiN_x films were deposited by direct current pulse magnetron sputtering at room temperature. We have studied the influence of N₂ flow rate and Si target sputtering power on the structural characteristics and properties of deposited films by using Fourier-transform infrared spectroscopy，auto water vapor permeability tester，ultraviolet-visible spectrophotometer，stylus profilometer，and contact angle measurement. The results indicate that the content of Si—O bonding in SiN_x films increaseds and moisture resistant property of SiN_x films decreases with increasing N₂ flow rate or decreasing Si target sputtering power. The films deposited at 300W of Si sputtering power and 6sccm of N₂ flow rate show excellent water vapor permeability (0.764) with transmittance higher than 97.5% in visible range.