Raman scattering in ion-implanted silicon exposed to rf-plasma treatment |
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| Authors: | V V Artamonov MYa Valakh V S Lysenko A N Nazarov V V Streltchuk |
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| Institution: | (1) Institute of Semiconductors, Ukraintan Academy of Sciences, Prospekt Nauki 45, SU-252650 Kiev-28, USSR |
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| Abstract: | The structural changes in implantation-amorphized silicon layers under radio-frequency (rf) discharge treatment, are studied by the Raman technique. The results are compared with those of thermally annealed samples. The rf treatment is shown to result in amorphous phase relaxation in silicon, while the thermal annealing converts a-Si into c-Si. The a-Si relaxation model under rf-plasma treatment is discussed. |
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| Keywords: | 78 30 Gt 61 70 T |
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