Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy |
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| Authors: | XF Wang Quan Li PF Lee JY Dai XG Gong |
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| Institution: | 1. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, The Chinese Academy of Sciences, Beijing 100190, China;2. Information and Post & Telecommunications Industry Products Quality Surveillance & Inspection Center, China Telecommunication Technology Labs, China Academy of Research of MIIT, Beijing 100015, China;3. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | The interfacial structures of HfO2 and HfAlO thin films on Si have been investigated using spatially resolved electron energy-loss spectroscopy. We have found that interfaces are not atomically sharp, and variation in the symmetry of the local atomic coordination lasts for a couple of monolayers for both the as-deposited HfO2 and the HfAlO samples. Annealing of the HfO2 film in the oxygen environment leads to the formation of a thick SiO2/SiOx stack layer in-between the original HfO2 and the Si substrate. As a comparison, the interfacial stability is significantly improved by Al incorporation into the HfO2 film (forming HfAlO), which effectively reduced/eliminated the interfacial silicon oxide formation during the oxygen annealing process. The mechanism of the high-k film/substrate stabilization by Al incorporation is discussed based on the experimental results. |
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