Dielectric anomaly in Li-doped zinc oxide thin films grown by sol–gel route |
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Authors: | Dhananjay Satyendra Singh J Nagaraju SB Krupanidhi |
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Institution: | (1) Department of Instrumentation, Indian Institute of Science, CV Raman Avenue, Bangalore, 560012, India;(2) Materials Research Center, Indian Institute of Science, Bangalore, 560012, India |
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Abstract: | Sol–gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400–500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the
C–V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation
factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the
values of spontaneous polarization (Ps) and coercive field were 0.15 μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.
PACS 77.22Ch; 77.22Ej; 77.80Bh |
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