N+GaAs subpicosecond photodetector irradiated by fast neutrons |
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Authors: | M Bia?ous B Pura J Strzeszewski M Wierzbicki K Brudzewski |
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Institution: | 1. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662, Warsaw, Poland 2. Faculty of Chemistry, Warsaw University of Technology, Koszykowa 75, 00-662, Warsaw, Poland
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Abstract: | We report experimental results of the characterization of an N+GaAs photodetector irradiated by fast neutrons with flux up to doses of 4×1017 n/cm2 using a constructed electro-optic sampling system and illumination with 80-fs-wide laser pulses. The investigated N+GaAs sample was compared with the same non-irradiated sample. The device shows a response time of 680 fs full width at half maximum (648 GHz, 3-dB bandwidth) with a voltage amplitude of 3.1 mV. Changes in the shape of the electrical signal for different beam power excitations and bias voltages have been demonstrated. Using X-ray diffraction and diffuse scattering analyses, we have observed a decrease of the lattice constant and an almost three times decreased radius of nanoclusters; the density dislocations increased by over four times after neutron irradiation. |
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