Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing |
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| Authors: | J.S. Yu J.D. Song J.M. Kim S.J. Bae Y.T. Lee H. Lim |
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| Affiliation: | (1) Department of Information and Communications, Kwangju Institute of Science and Technology, Gwangju 500-712, Korea, KR;(2) School of Electrical and Computer Engineering, Ajou University, Suwon 442-749, Korea, KR |
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| Abstract: | We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO2- (Si3N4-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance. Received: 2 September 2002 / Accepted: 3 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +82-62/970-2204, E-mail: ytlee@kjist.ac.kr |
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| Keywords: | PACS: 78.67.-n 78.66.Fd 42.55.Px |
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