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Comparison of depth profiles in SIMS by a fuzzy method |
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| Authors: | Matthias Otto Gerhard Stingeder Kurt Piplits Manfred Grasserbauer Michael Heinrich |
| Affiliation: | (1) Department of Chemistry, Bergakademie Freiberg, Akademiestraße 6, D-O-9200, Federal Republic of Germany;(2) Institute of Analytical Chemistry, Technical University Vienna, Getreidemarkt 9/151, A-1060 Wien, Austria;(3) Institute of General Electrical Engineering and Electronics, Technical University Vienna, Gußhausstraße 27-29, A-1040 Wien, Austria |
| Abstract: | Automated quantitative comparison of depth-profiles recorded by SIMS based on a fuzzy difference measure has been used to characterize Sb and B implantation profiles in a marker experiment to study the diffusion of As in silicon. The variations of the concentration (intensity) measurements are described by a fuzzy set that is specified by smoothing the data with a polynomial digital filter. For each depth an individual spread as the size of variation is defined. Applications of the method enabled the influence of As-concentration and of annealing conditions on the implantation profiles of Sb and B to be quantified. |
| Keywords: | fuzzy theory SIMS chemometrics depth profile analysis |
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