Modification of anode surface in organic light-emitting diodes by chalcogenes |
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| Authors: | Marina A. Katkova Alexey N. Konev Irina I. Pestova Mikhail N. Bochkarev |
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| Affiliation: | a G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Tropinina 49, 603950 Nizhny Novgorod, Russia
b P.N. Lebedev Physical Institute of RAS and P.N. Lebedev Research Centre in Physics, Leninsky prosp. 53, 119991 Moscow, Russia |
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| Abstract: | Influence of thin chalcogen X (S, Se, Te) interlayer between anode (indium-tin oxide, ITO) and a layer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) used as a hole-transport layer (HTL) on the operating characteristics of organic light-emitting diodes (OLEDs) of composition ITO/X/TPD/Alq3/Yb (Alq3 - aluminum 8-quinolinolate) has been investigated. It was found that the sulphur layer decreases operating voltage and enhances operating stability of a device while the selenium or tellurium interlayers impair these characteristics. |
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| Keywords: | OLEDs Sulphur Selenium Tellurium ITO/TPD interface |
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