Preparation of a Waveguide Array in Flame Hydrolysis Deposited GeO2—SiO2 Glasses by Excimer Laser Irradiation

SiO2 galss films doped with GeO2 were prepared by the flame hydrolysis deposition method,then annealed at 1200℃.After exposure to high pressure hydrogen,the as-deposited films were irradiated with excimer laser pulses operated at 248nm,The induced refractive index change(the growth of index change was 0.33%)was measured by a spectorscopic ellipsometer.A waveguide array has been written in the film by irradiation through a phase mask.