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Effect of short-duration annealing on the exchange bias in IrMn/Co films
Authors:A. Harres  S. Nicolodi  L.G. Pereira  J.E. Schmidt  A.D.C. Viegas  J. Geshev
Affiliation:1. Instituto de Física, UFRGS, 91501-970 Porto Alegre, RS, Brazil;2. Departamento de Física, UFSC, 88010-970 Florianópolis, SC, Brazil;1. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China;3. Key Laboratory for Special Function Materials and Structural Design of the Ministry of the Education, Lanzhou University, Lanzhou 730000, China;4. Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China;1. State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, No. 96, Jinzhai Road Hefei 230026, People''s Republic of China;2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People''s Republic of China;1. Faculty of Science and Technology, Ryukoku University, Otsu 520-2194, Japan;2. Department of Materials Science, Tohoku University, Sendai 980-8579, Japan;3. Research Institute for Engineering and Technology, Tohoku Gakuin University, Tagajo 985-8537, Japan;4. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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