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Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
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| Authors: | Y Qu JX Zhang A Uddin CY Liu S Yuan MCY Chan B Bo G Liu H Jiang |
| Institution: | (1) National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, No. 7089 Weixing Road, Changchun, 30022, P.R. China;(2) School of Materials Engineering, Nanyang Technological University, 639798 Singapore, Singapore;(3) Ting Gi Technologies, 83 Science Park Drive, 118258 Singapore, Singapore;(4) Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, P.R. China |
| Abstract: | Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength. |
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