Structure and adsorption characteristics of (111) and (111) surfaces of InSb cleaned by ion bombardment and annealing
Affiliation:
1. Institute of Physics, BTU Cottbus-Senftenberg, PBox 101344, 03013 Cottbus, Germany;2. Dipartimento di Fisica Università di Roma Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy;3. Dipartimento di Matematica e Fisica, Università Roma Tre, Via della Vasca Navale 84, 00146 Rome, Italy;1. Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand;2. International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand;3. Advanced Optical Technology (AOT) Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand;4. National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand;5. Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, National Science and Technology Development Agency (NSTDA), Chachoengsao 24000, Thailand;6. National Metal and Materials Technology Center (MTEC), National Electronics and Computer Technology Center, National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand;1. Institut für Physik, Technische Universität Ilmenau PF 100565, 98684 Ilmenau, Germany;2. Department of Petrochemistry and Refining, University of Kinshasa, Kinshasa, People’s Republic of Congo;3. Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic;4. Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany;5. Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany;6. European Organization for Nuclear Research - CERN, 1211 Meyrin, Switzerland;1. School of Science and Engineering, WASEDA University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, Japan;2. JST–CREST, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012, Japan
Abstract:
Low energy electron diffraction studies have been made of five (111) and (111 role=presentation style=font-size: 90%; display: inline-block; position: relative;>) surfaces of InSb which were cleaned by argon ion bombardment and annealing. From the diffraction patterns obtained in both (110) and (112) azimuths, a double-spaced structure of surface atoms appears to be present on (111) and (111 role=presentation style=font-size: 90%; display: inline-block; position: relative;>) surfaces. Exposure to oxygen resulted in a gradual decrease in intensity of all beams, indicating that an amorphous layer of oxygen was formed. The sticking coefficient for oxygen on the cleaned surfaces has a maximum value of 10−5, and appears to be smiliar on both (111) and (111 role=presentation style=font-size: 90%; display: inline-block; position: relative;>) surfaces. The cleaned surface pattern could be regenerated by heating the crystal at about 330°C for approximately 1 hr.
