Photoluminescence and persistent photoconductivity of AlxGa1-xN/GaN heterostructures |
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| Authors: | S.J. Chung B. Karunagaran S. Velumani C.-H. Hong H.J. Lee E.-K. Suh |
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| Affiliation: | (1) Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju, 561-756, Korea;(2) Departamento de Física, TEC de Monterrey, Campus Monterrey, E. Garza-Sada 2501, Monterrey, N.L., C.P. 64849, Mexico |
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| Abstract: | We have investigated the optical properties of AlxGa1-xN/GaN heterostructures (x=0.08, 0.15, 0.33) grown by metal organic chemical vapor deposition on sapphire using photoluminescence (PL) and persistent photoconductivity (PPC) measurements. For the AlxGa1-xN/GaN heterostructures (HS) containing high Al composition, we observed an anomalous temperature-dependent photoluminescence and persistent photoconductivity effects. These results show a strong dependence of the physical properties of AlxGa1-xN/GaN HS on the Al content and layer thickness. The anomalous temperature-dependent PL is usually attributed to the presence of carrier localization states. These phenomena are explained based on the alloy compositional fluctuations in the AlxGa1-xN/GaN HS. From the PPC measurements, the photocurrent (PC) quenching was observed for AlxGa1-xN/GaN HS and it is explained by the metastable states formed in the underlying GaN layer. Also, the mechanisms behind the PC quenching and PPC phenomena are explained in detail. PACS 72.20.Jv; 72.40.+w; 78.55.Cr |
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