Photoluminescence and EPR of porous silicon formed on n+ and p+ single crystals implanted with boron and phosphorus ions

The effect of combined doping by shallow donor and acceptor impurities on boosting the quantum yield of porous-silicon photoluminescence (PL) in the visible and near IR range was studied using phosphorus and boron ion implantation. Nonuniform doping of samples and subsequent oxidizing annealing were performed before and after porous silicon was formed on silicon single crystals strongly doped by arsenic or boron up to ≈10¹⁹ cm^?3. The concentration of known P_b centers of nonradiative recombination was controlled by electron paramagnetic resonance. It is shown that there is an optimal joined content of shallow donors and acceptors that provides a maximum PL intensity in the vicinity of the red part of the visible spectrum. According to estimates, the PL quantum yield in the transitional n ⁺⁺-p ⁺ or p ⁺⁺-n ⁺ layer of porous silicon increases by two orders of magnitude as compared to that in porous silicon formed on silicon not subjected to ion irradiation.