Solid-state interdiffusion mechanism in strained Si1–xGex/Si heterostructures |
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Authors: | Keunjoo Kim Hong Seub Kim Jae Yon Kim Young Hee Lee Hyung Jae Lee Hwack Joo Lee Hyun Ryu |
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Institution: | (1) Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea, KR;(2) Korea Research Institute of Standards and Science, Taejon 305-600, Korea, KR |
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Abstract: | The interdiffusion in a low-strained Si0.93Ge0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier
of 1.81 eV with a diffusion constant of 4.3 × 10−5 cm2/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the
growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration
gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three
groups, depending on the Ge mole fraction x. For x < 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 < x < 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x > 0.4, Si atoms can be diffused into the alloy.
Received: 22 April 1997 / Accepted: 4 June 1997 |
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Keywords: | SiGe heterointerface Thermal interdiffusion Dislocation DCXD MBE growth |
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