高温快速退火对重掺锑硅单晶中流动图形缺陷的影响

对大直径重掺锑硅单晶中流动图形缺陷（FPDs）进行了研究.利用高温快速退火工艺（RTA） ，将重掺锑硅片在N₂，Ar，H₂三种不同气氛下进行热处理，对退 火前后FPDs的密度变化进行了研究，分析了重掺锑硅单晶中FPDs在不同高温RTA过程中的热 稳定性.并从重掺杂原子锑与间隙氧之间的关系，分析了重掺锑硅片中FPDs在高温快速退火 工艺下的消除机制，认为重掺锑硅单晶中大量的锑原子，影响了硅片中间隙氧的浓度分布， 进而影响了原生微缺陷的形成及热行为. 关键词： 重掺锑硅单晶 快速退火（RTA） 流动图形缺陷（FPDs） 空洞缺陷

Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi

Flow pattern defects(FPDs) in as-grown and rapid thermal annealed heavily Sb-dop ed silicon wafers was investigated. The experimental results show that the dens ity of FPDs can be reduced after high temperature annealing, and H₂ is the most effective annealing atmosphere. The mechanism of elimination of FPDs is also discussed from the relationship between heavily doping Sb and interstit ial oxygen concentration. The heavily doping Sb influences not only the distribu tion of initial oxygen concentration in CZSi wafer, but also the formation and h eat behavior of grown-in void defects.