Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory |
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| Authors: | Zhang Kai-Liang Liu Kai Wang Fang Yin Fu-Hong Wei Xiao-Ying and Zhao Jin-Shi |
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| Institution: | [1]school of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic ＆ Communication Devices, Tianjin University of Technology, Tianjin 300384, China [2]School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio-frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the growth pattern of the conducting filaments. Additionally, the related conducting mechanism is discussed in detail. |
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| Keywords: | resistive switching vanadium oxide conducting filament magnetron sputtering |
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