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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions |
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| Authors: | Zheng Liu Zhang Feng Liu Sheng-Bei Dong Lin Liu Xing-Fang Fan Zhong-Chao Liu Bin Yan Guo-Guo Wang Lei Zhao Wan-Shun Sun Guo-Sheng He Zhi and Yang Fu-Hua |
| Institution: | [1]Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | 4H-SiC, junction barrier Schottky （JBS） diode, high-temperature annealed resistive terminationextension （HARTE） |
| Keywords: | 4H-SiC junction barrier Schottky （JBS） diode high-temperature annealed resistive terminationextension （HARTE） |
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