掺铟氧化锌纳米盘的制备、结构及性质研究

热蒸发Zn、In₂O₃和C粉混合物, 在没有催化剂的条件下制备出掺铟氧化锌纳米盘. 纳米盘呈六边形或十二边形, 均是结晶完好的纤锌矿结构的单晶, 对角线长度约1~3 μm , 厚度40~100 nm. 纳米盘的生长是由自催化固-液-气(V-L-S)机理控制, 在实验条件下Zn和In的液滴抑制纳米盘 0001]方向的生长. EDS分析表明, 六边形纳米盘和十二边形纳米盘中In的含量相近, 约为2.2%. 室温光致发光谱显示掺杂后的紫外发射峰位稍有蓝移, 同时半高宽(HWHM)变大, 没有观察到绿光发射峰位.

Fabrication and Characterization of In-doped Zinc Oxide Nanodisks

In-doped ZnO nanodisks were successfully fabricated by thermal evaporation Zn, In₂O₃, and graphite powder mixture without catalyst. SEM images show that some ZnO nanodisks have perfect hexagonal shape, and others have dodecagon shape. These nanodisks are about 1~3 μm in size and 40~100 nm in thickness. XRD, TEM, and EDS investigations confirm single-crystalline ZnO with wurtzite structure. The hexagonal nanodisks grow mainly along the six symmetric directions of <10-10>, and the dodecagonal nanodisks grow along <2-1-10> and <10-10>, with both kinds of nanodisks′ growth along 0001] being suppressed. The In content of nanodisks reaches 2.2%. A possible mechanism is also proposed. Room temperature photoluminescence spectra of the nanodisks shows that the UV emission peak blueshifts and becomes broader after doping. These materials as building blocks have potential in applications such as optoelectronics.