High pressure photoluminescence and resonant Raman study of GaAs

Photoluminescence and resonant Raman scattering have been studied in GaAs under hydrostatic stress up to 72 kbar. From the pressure dependence of the photoluminescence intensity the pressure coefficient of the X₆ conduction band minimum in GaAs has been determined. The pressure dependence of zone edge phonon energies in GaAs is also reported.