Far-infrared absorption by excitons in silicon |
| |
| Authors: | T. Timusk H. Navarro N.O. Lipari M. Altarelli |
| |
| Affiliation: | Department of Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1;IBM T.J. Watson Research Center, Yorktown Heights, New York, U.S.A. 10598;Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois, U.S.A. 61801 |
| |
| Abstract: | ![]()
We report on the first observation of 1s to 2p absorption by excitons in pure silicon. A group of strong lines at 10.2, 11.4 and 12.0 meV is observed along with a continuum extending to higher frequency. A theoretical model for the excitonic absorption accounts well for the observed structure. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
