Theoretical study of relaxation at the (110) Ge-GaAs interface |
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| Authors: | Warren E. Pickett Marvin L. Cohen |
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| Affiliation: | Department of Physics, University of California and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California, 94720, USA |
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| Abstract: | ![]()
A simple relaxation of the Ge-GaAs (110) interface is studied theoretically using self-consistent pseudopotentials. The relaxation is one in which the distance between the Ge and GaAs atomic planes at the interface is increased by 20%. Band edge discontinuities are found to be insensitive to this type of relaxation in spite of large distortions of the electronic charge density. |
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