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Thick LPE Layers of InAs1—xSbx for 3—5 μm Optoelectronic Applications |
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| Authors: | A. Popov A. Koinova E. P. Trifonova S. Tzeneva |
| Abstract: | N-InAs1—xSbx/n, p-InAs heterostructures were grown by liquid phase epitaxy on (100) oriented substrates. The layer composition was varied in the interval 0 < x < 0.1, the corresponding lattice mismatch being not greater than 0.5%. The layer composition was studied by microprobe analysis on the surface of the structure cross-section. Microhardness profiles were investigated using Vickers and Knoop indentors. Raman scattering was also studied. |
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