| Abstract: | The memory effects in field-effect transistor structures with an active layer based on composite films of a semiconductor
polymer, i.e., the carbazole derivative and gold nanoparticles, manifesting themselves in the hysteresis of the transient
characteristics of the transistor have been studied. It has been shown that the observed effects are associated with the features
of transport in the polymer-gold nanoparticle structure, where the gold particles serve as a medium of charge carrier collection
(accumulation). The data writeerase mechanism based on conductivity modulation of the working channel of the field-effect
transistor by the gate voltage have been discussed. |
