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Theory of surface polaritons in n-type silicon in the presence of a dc current,including the electron thermal pressure gradient
Authors:R.F. Wallis  B.G. Martin  J.J. Quinn
Affiliation:Physics Department, University of California, Irvine, California 92717, USA;Aerojet Electrosystems, Azusa, California 91702, USA;Physics Department, Brown University, Providence, Rhode Island 02912, USA
Abstract:
A theoretical investigation has been made of the effect of a drift current, including the electron thermal pressure gradient, on surface polaritons in n-type Si. The polariton propagation and drift current directions are taken to be either parallel or antiparallel. Retardation is included, but damping is neglected. The specular reflection approach of Kliewer and Fuchs is used to obtain the polariton dispersion relation. The results show that the drift current and surface polaritons interact, leading to evanescent waves for certain frequencies. However, no wave amplification is obtained.
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