Computer simulation of vacancy migration in a fcc tilt boundary |
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| Authors: | Thomas Kwok Paul S Ho Sidney Yip |
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| Institution: | IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA;Department of Nuclear Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA |
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| Abstract: | Vacancy jumps in a bicrystal model of Σ = 5 (36.9°) 001] tilt boundary in aluminum have been observed at temperatures between 700 and 800 K by means of molecular dynamics simulation. Preliminary results indicated considerable structure dependence and yielded an activation energy for vacancy migration of 0.38 eV. In contrast to a previous study of vacancy migration in a bcc tilt boundary, thermal activation of a boundary interstitial by Frenkel pair production was not observed. |
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