Ge adsorption on the Si(111) surface |
| |
| Authors: | S.B. Zhang John E. Northrup Marvin L. Cohen |
| |
| Affiliation: | Department of Physics and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720, USA |
| |
| Abstract: | ![]()
Total energy calculations, performed for one monolayer of Ge adsorbed on Si(111), indicate that 1 × 1 models such as the atop site and hollow site adsorption geometries are unstable with respect to the formation of 2 × 1 Seiwatz chains of Ge adatoms. This result indicates that, for one monolayer coverage, Ge-Ge bonds are likely to form. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
