| Luminescence of Ce3+ in lanthanum silicon oxynitride |
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| 作者姓名： | 胡龙 徐学文 卢遵铭 范英 李养贤 唐成春 |
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| 作者单位： | School of Material Science and Engineering,Hebei University of Technology |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 10974041) and the Natural Science Foundation of Hebei Province of China (Grant No. E2010000084). |
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| 摘 要： | The luminescence properties of lanthanum silicon oxynitride(La-Si-O-N) series doped by trivalent Ce ions have been investigated to seek for tunable wavelength-conversion phosphor for white light emitting diode applications.Four compound hosts of LaSiO2N,La4Si2O7N2,La5Si3O12 N,and La2Si6O3N8 were synthesized and examined in this work.Crystallographic examination for the equal amount of Ce 3+ substitution indicated that the covalency degree decreased in a sequence LaSiO2 N > La2Si6O3N8 > La4Si2O7N2 > La5Si3O12 N,not simply in correlation to the ratio of N3/O2.Excitation and emission spectrum measurements showed the main features of Ce3+ luminescence in the series:the centre of gravity of 5d bands depends on crystal-field splitting more strongly than that on covalency of Ce-N bonding;nephelauxetic effect could not be observed clearly for the investigated series;to some extent Stokes shift was dominated by crystal-field splitting rather than Ce-N covalency degree.
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| 关 键 词： | photoluminescence nitrides oxides chemical synthesis |
| 收稿时间： | 2010-09-20 |
Luminescence of Ce3+ in lanthanum silicon oxynitride |
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| Hu Long,Xu Xue-Wen,Lu Zun-Ming,Fan Ying,Li Yang-Xian and Tang Cheng-Chun.Luminescence of Ce3+ in lanthanum silicon oxynitride[J].Chinese Physics B,2010,19(12):127807-127807. |
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| Authors: | Hu Long Xu Xue-Wen Lu Zun-Ming Fan Ying Li Yang-Xian and Tang Cheng-Chun |
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| Institution: | School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | The luminescence properties of lanthanum silicon oxynitride (La-Si-O-N) series doped by trivalent Ce ions have been investigated to seek for tunable wavelength-conversion phosphor for white light emitting diode applications. Four compound hosts of LaSiO2N, La4Si2O7N2, La5Si3O12N, and La2Si6O3N8 were synthesized and examined in this work. Crystallographic examination for the equal amount of Ce3+ substitution indicated that the covalency degree decreased in a sequence LaSiO2N > La2Si6O3N8 > La4Si2O7N2 > La5Si3O12N, not simply in correlation to the ratio of N3/O2. Excitation and emission spectrum measurements showed the main features of Ce3+ luminescence in the series: the centre of gravity of 5d bands depends on crystal-field splitting more strongly than that on covalency of Ce–N bonding; nephelauxetic effect could not be observed clearly for the investigated series; to some extent Stokes shift was dominated by crystal-field splitting rather than Ce–N covalency degree. |
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| Keywords: | photoluminescence nitrides oxides chemical synthesis |
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