On the possibility of detecting the relaxation optical bistability in an extended medium

The possibility for efficient detection of wave phenomena in an optically extended semiconductor in the case of development of instability in a system with the relaxation mechanism of optical bistability was studied. It is shown that the use of two-wave action allows the development of processes in the bulk of the semiconductor to be detected with the help of probing radiation. The influence of diffusion and thermal conductivity on the characteristics of wave processes in a semiconductor and the possibility of realizing the detection are revealed.