Theoretical study on Si-doped hexagonal boron nitride (h-BN) sheet: Electronic,magnetic properties,and reactivity

The properties and reactivity of Si-doped hexagonal boron nitride (h-BN) sheets were studied using density functional theory (DFT) methods. We find that Si impurity is more likely to substitute the boron site (Si_B) due to the low formation energy. Si-doping severely deforms h-BN sheet, resulting in the local curvature changes of h-BN sheet. Moreover, Si-doping introduces two spin localized states within the band gap of h-BN sheet, thus rendering the two doped systems exhibit acceptor properties. The band gap of h  -BN sheet is reduced from ∼4.70 eV$\sim 4.70\text{eV}$ to 1.24 (for Si_B) and 0.84 eV (for Si_N), respectively. In addition, Si-doped one exhibits higher activity than pristine one, endowing them wider application potential.