A secondary ion mass spectrometric study of thallium oxide thin films grown via metal organic chemical vapour deposition

Within a comprehensive programme including synthesis via metal organic chemical vapour deposition (MOCVD) and characterization of inorganic compounds and materials of possible interest in technologies based on thin films, results concerning the deposition of metal oxides by means of volatile organometal precursors are reported. In particular, thallium oxide films obtained by the MOCVD technique and commercial powders of Tl₂O₃ and Tl₂O adsorbed on several metal substrates (stainless steel, Si, Cu, Mo, Pt) were studied by secondary ion mass Spectrometry (SIMS) under ion beam bombardment at different ion energies. The positive- and negative-ion mass spectra exhibit typical isotopic patterns of several ionic species produced by interesting interfacial reactions, and the analysis of their relative abundances provides a measure of oxide reactivity towards different substrates. SIMS measurements of metal substrates were also performed. The ability and limits of SIMS in the reactivity study of thallium oxide powders and films and, in addition, in the identification of reaction products evidencing impurity species that, in turn, can be ascribed to the substrates or to the precursors used for the oxide synthesis is pointed out.