Rate-determining process in chemical vapor deposition of SiC on off-axis -SiC |
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| Authors: | Shunichi Nakamura Tsunenobu Kimoto Hiroyuki Matsunami |
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| Affiliation: | Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan |
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| Abstract: | Homoepitaxial growth on off-axis α-SiC at reduced pressures in a horizontal cold-wall chemical vapor deposition (CVD) system operating at has been investigated. The growth rate was found inversely proportional to the square root of total pressure or the partial pressure of H2, a carrier gas. A model to explain the experimental results is proposed, where the rate-determining process in CVD is competition between Si species and hydrogen atoms for C (carbon) dangling bonds at SiC step edges. |
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| Keywords: | A3. Chemical vapor deposition processes B2. Semiconducting silicon compounds |
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