| 用椭圆偏振光法四相模型研究Si SOI光学性质 |
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| 引用本文： | 朱蔚雯,朱文玉,王渭源. 用椭圆偏振光法四相模型研究Si SOI光学性质[J]. 物理学报, 1986, 35(6): 797-802 |
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| 作者姓名： | 朱蔚雯 朱文玉 王渭源 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 用椭圆偏振光谱仪在波长为3000到5000?范围内,测量了绝缘衬底上低压CVD生长的多晶Si薄膜(LPCVD Si SOI)及其激光退火和高频感应高温石墨棒热退火后的椭圆偏振光谱参数。以矩阵乘积形式表示了椭偏光谱四相模型,用Monte Carlo统计模拟法求得Si SOI表面多晶Si薄膜的光学参数ε1和ε2,并对退火后出Si SOI的晶格完整性进行了讨论。关键词：
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| 收稿时间： | 1985-03-25 |
STUDY OF Si SOI OPTICAL PROPERTIES BY USING ELLIPSOMETRIC FOUR-PHASE MODEL |
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| ZHU WEI-WEN,ZHU WEN-YU and WANG WEI-YUAN. STUDY OF Si SOI OPTICAL PROPERTIES BY USING ELLIPSOMETRIC FOUR-PHASE MODEL[J]. Acta Physica Sinica, 1986, 35(6): 797-802 |
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| Authors: | ZHU WEI-WEN ZHU WEN-YU WANG WEI-YUAN |
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| Abstract: | The ellipsometric parameters of LPCVD poly-Si on insulating SiO2 (Si SOI) before or after annealing with laser or RF inducting graphite strip heater were measured by speetroscopic ellipsometry over the wavelength interval 3000-5000?. The four-phase model of ellipsometric spectra was presented by matrix multiplication and the Monte Carlo simulation was used to calculate both ε1 and ε2 of Si SOI. The lattice perfec-tion of Si SOI after annealing is discussed
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