用椭圆偏振光法四相模型研究Si SOI光学性质

用椭圆偏振光谱仪在波长为3000到5000?范围内,测量了绝缘衬底上低压CVD生长的多晶Si薄膜(LPCVD Si SOI)及其激光退火和高频感应高温石墨棒热退火后的椭圆偏振光谱参数。以矩阵乘积形式表示了椭偏光谱四相模型,用Monte Carlo统计模拟法求得Si SOI表面多晶Si薄膜的光学参数ε₁和ε₂,并对退火后出Si SOI的晶格完整性进行了讨论。 关键词：

STUDY OF Si SOI OPTICAL PROPERTIES BY USING ELLIPSOMETRIC FOUR-PHASE MODEL

The ellipsometric parameters of LPCVD poly-Si on insulating SiO₂ (Si SOI) before or after annealing with laser or RF inducting graphite strip heater were measured by speetroscopic ellipsometry over the wavelength interval 3000-5000?. The four-phase model of ellipsometric spectra was presented by matrix multiplication and the Monte Carlo simulation was used to calculate both ε₁ and ε₂ of Si SOI. The lattice perfec-tion of Si SOI after annealing is discussed
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