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Finite volume element approximation and analysis for a kind of semiconductor device simulation
Authors:Chuanjun Chen  Xiaohan Long
Institution:1. Department of Mathematics and Information Science, Yantai University, Yantai, 264005, P.R. China
2. Mathematics and Information Department, Ludong University, Yantai, 264025, P.R. China
Abstract:In this paper, we present a finite volume element scheme for a kind of two dimensional semiconductor device simulation. A general framework is developed for finite volume element approximation of the semiconductor problems. We construct a fully discrete finite volume element scheme based on triangulations with a piecewise linear finite element space and a general type of control volume. Optimal-order convergence in H 1-norm is derived.
Keywords:
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