Surface photovoltage measurement in MOS structures

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E_t¹ = E_v + 0.25 eV and E_t² = E_c – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.