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Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well
Authors:M N Khannanov  I V Kukushkin  S I Gubarev  J Smet  K von Klitzing  W Wegscheider  C Gerl
Institution:1.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka, Moscow region,Russia;2.Max-Planck-Institut für Festk?rperforschung,Stuttgart,Germany;3.Institut für Experimentelle und Angewandte Physik,Universit?t Regensburg,Regensburg,Germany
Abstract:The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 1010 cm?2 to 1.3 × 1011 cm?2.
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