Observation of two-step excitation of photoluminescence in silicon nanostructures |
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| Authors: | L. A. Golovan’ A. A. Goncharov V. Yu. Timoshenko A. P. Shkurinov P. K. Kashkarov N. I. Koroteev |
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| Affiliation: | (1) M. V. Lomonosov Moscow State University, Department of Physics, and International Laser Center, 119899 Moscow, Russia |
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| Abstract: | Efficient visible-range photoluminescence with photon energy higher than the photon energy of the exciting radiation is observed in nanostructures of porous silicon subjected to heat treatment in vacuum. The photoluminescence intensity is found to be virtually identical for cw and femtosecond excitation by Ti:sapphire laser radiation with the same average power. The results can be explained by a two-step cascade photoluminescence excitation process in which optical passivation of defects of the dangling silicon bond type occurs. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 10, 732–736 (25 November 1998) |
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