Design and numerical modeling of normal-oriented quantum wire infrared photodetector array

A design for an IR photodetector is proposed and described that uses an array of II–VI semiconductor quantum wire heterostructures and that uses intersubband transitions in the conduction band of the wires as the IR detection mechanism. The detection mechanism of these quantum wire infrared detectors (QRIP) is similar to that used in quantum well infrared photodetectors (QWIP) but important differences arise due to the further confinement of the electrons in an additional dimension. QWIPs are briefly described, including their undesirable aspects and how QRIPs offer solutions to these problematic issues. The electron quantum states, absorption and other important aspects of several QRIP designs are calculated using analytical and finite difference techniques. A potential design for a focal plane array using QRIPs is described that uses a nanopatterned alumina template for DC electrodeposition of II–VI semiconductor quantum wires oriented normal to the substrate.