The Sol-Gel Chemistry of Ferroelectric SrBi2Ta2O9 Thin Layers |
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| Authors: | Yong Tae Kim Chulsoon Hwang Hee K. Chae Yong K. Lee Wan I. Lee Yongkwan Dong Hoseop Yun |
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| Affiliation: | (1) Department of Chemistry, Hankuk University of Foreign Studies, Yongin, 449-791, Korea;(2) Department of Chemistry, Inha University, Inchon, 402-751, Korea;(3) Department of Molecular Science and Technology, Ajou University, Suwon, 442-749, Korea |
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| Abstract: | ![]()
A characterization of sol-gel precursors of SrBi2Ta2O9 (SBT) has been carried out. Each molecular precursor, [SrBi2+xTa2(OCH2CH2OCH3)18]n (1) (x = 0.0, 0.2, and 0.4) and [SrTa2(OEt)(OiPr)11(iPrOH)2] (2) was prepared from the mixtures of Bi(OR)3, Sr(OR)2, and Ta(OR)5 (R = Et, iPr, and CH2CH2OCH3), respectively. 1H and 13C NMR spectroscopy and powder X-ray diffractometry have been used to characterize precursor molecules and their oxides, respectively. Especially, X-ray single crystal studies of complex 2 show that the molecule is made up of three octahedra; the central [SrO6] octahedron is sharing two neighboring edges with the peripheral [TaO6] ones. The SBT film derived from the precursor 1 presents outstanding ferroelectric properties (Pr = 9  C/cm2; Ec = 0.8 V). |
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| Keywords: | precursor chemistry SBT thin film single precursor single crystal |
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