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Analysis of Acoustic Domain Fluxes in a Piezoelectric Semiconductor n-CdS Measured by Brillouin Scattering Method
Authors:Yoshiaki Tokunga  Shohei Kanno  Toshinori Okayama
Affiliation:(1) Graduate School of Electrical Engineering and Electronics of Kanazawa Institute of Technology, 7-1 Ogigaoka, Nonoichi-machi Ishikawa, 921-8501, Japan;(2) Optoelectronic Device System Research and Development Center of Kanazawa Institute of Technology, 7-1 Ogigaoka, Nonoichi-machi Ishikawa, 921-8501, Japan
Abstract:Acoustic fluxes constituting an acoustic domain in a piezoelectric semiconducting n-CdS were analyzed by Brillouin scattering method. Obtained results were as follows: 0.8 GHz and 2.0 GHz acoustic fluxes were faster than the sound velocity 1.75 × 105 cm/s. The observed profile of the 2.0 GHz flux agreed fairly well with the simulated one performed numerically by KdV equation. The faster positions of the acoustic domain were formed by lower frequency acoustic fluxes and the slower positions understood by acoustic fluxes around maximum gain frequency generated first in a small signal regime.
Keywords:Brillouin scattering method  n-CdS  soliton  KdV equation  acoustic domain
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